Tetsu Kachi: search on Z-Library

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1

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Kodama, Masahito, Sugimoto, Masahiro, Hayashi, Eiko, Soejima, Narumasa, Ishiguro, Osamu, Kanechika, Masakazu, Itoh, Kenji, Ueda, Hiroyuki, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 658 KB

english, 2008

2

[IEEE 2011 IEEE Energy Conversion Congress and Exposition (ECCE) - Phoenix, AZ, USA (2011.09.17-2011.09.22)] 2011 IEEE Energy Conversion Congress and Exposition - Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Okamoto, Masayuki, Toyoda, Genki, Hiraki, Eiji, Tanaka, Toshihiko, Hashizume, Tamotsu, Kachi, Tetsu

Year:

2011

Language:

english

File:

PDF, 1.34 MB

english, 2011

3

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N 2 partial pressure annealing: Transmission electron microscopy analysis

Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 2.73 MB

english, 2020

4

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Impacts of high temperature annealing above 1400 Â° C under N 2 overpressure to activate acceptors in Mg-implanted GaN

Sakurai, Hideki, Narita, Tetsuo, Hirukawa, Kazufumi, Yamada, Shinji, Koura, Akihiko, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

Year:

2020

File:

PDF, 2.10 MB

2020

5

Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

Nakano, Yoshitaka, Fujishima, Osamu, Kachi, Tetsu

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 432 KB

english, 2004

6

Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate

Kim, Eunhee, Soejima, Narumasa, Watanabe, Yukihiko, Ishiko, Masayasu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 377 KB

english, 2010

7

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Yoshino, Michitaka, Ando, Yuto, Deki, Manato, Toyabe, Toru, Kuriyama, Kazuo, Honda, Yoshio, Nishimura, Tomoaki, Amano, Hiroshi, Kachi, Tetsu, Nakamura, Tohru

Journal:

Year:

2019

File:

PDF, 7.30 MB

2019

8

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - GaN power device and reliability for automotive applications

Kachi, Tetsu, Kikuta, Daigo, Uesugi, Tsutomu

Year:

2012

Language:

english

File:

PDF, 479 KB

english, 2012

9

Identification of origin of ECâ0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

Horita, Masahiro, Narita, Tetsuo, KACHI, Tetsu, SUDA, Jun

Journal:

Applied Physics Express

Year:

2020

File:

PDF, 933 KB

2020

10

High Pressure Processing of Ion Implanted GaN

Sierakowski, Kacper, Jakiela, Rafal, Lucznik, Boleslaw, Kwiatkowski, Pawel, Iwinska, Malgorzata, Turek, Marcin, Sakurai, Hideki, Kachi, Tetsu, Bockowski, Michal

Journal:

Year:

2020

File:

PDF, 27.30 MB

2020

11

Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

Katsuno, Takashi, Kanechika, Masakazu, Itoh, Kenji, Nishikawa, Koichi, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 927 KB

english, 2013

12

Progress on and challenges of p-type formation for GaN power devices

Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 3.02 MB

2020

13

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

Narita (成田哲生), Tetsuo, Tomita (冨田一義), Kazuyoshi, Tokuda (徳田豊), Yutaka, Kogiso (小木曽達也), Tatsuya, Horita (堀田昌宏), Masahiro, Kachi (加地徹), Tetsu

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.94 MB

english, 2018

14

[IEEE 2019 19th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2019.6.6-2019.6.7)] 2019 19th International Workshop on Junction Technology (IWJT) - Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing

Sakurai, Hideki, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Suzuki, Hideo, Narita, Tetsuo, Kataoka, Keita, Horita, Masahiro, kowski, Michal Bo, Suda, Jun, Kachi, Tetsu

Year:

2019

File:

PDF, 112 KB

2019

15

Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN

Nakano, Yoshitaka, Kachi, Tetsu

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 236 KB

english, 2001

16

Effect of C/B Sequential Implantation on the B Acceptors in 4H-SiC

Nakano, Yoshitaka, Kachi, Tetsu, Tadano, Hiroshi, Malhan, Rajesh Kumar

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 180 KB

english, 2000

17

Erratum: “Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO 2 interface”

Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 177 KB

english, 2018

18

Influence of Preoperative Intravitreal Bevacizumab on Visual Function in Eyes with Proliferative Diabetic Retinopathy

Ushida, Hiroaki, Kachi, Shu, Asami, Tetsu, Ishikawa, Kohei, Kondo, Mineo, Terasaki, Hiroko

Journal:

Ophthalmic Research

Year:

2013

Language:

english

File:

PDF, 782 KB

english, 2013

19

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Process Technologies for GaN High Voltage Devices

Kachi, Tetsu, Narita, Tetsuo, Sakurai, Hideki, Suda, Jun

Year:

2019

File:

PDF, 285 KB

2019

20

Experimental test of CH3OH laser line assignments with competitive and cascade couplings

Tetsu Kachi, Shozo Kon

Journal:

Infrared Physics

Year:

1982

Language:

english

File:

PDF, 345 KB

english, 1982

21

Hole traps in n-GaN detected by minority carrier transient spectroscopy

Yutaka Tokuda, Yujiro Yamada, Tatsunari Shibata, Shintaro Yamaguchi, Hiroyuki Ueda, Tsutomu Uesugi, Tetsu Kachi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

22

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Kogiso, Tatsuya, Narita, Tetsuo, Yoshida, Hikaru, Tokuda, Yutaka, Tomita, Kazuyoshi, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 736 KB

english, 2019

23

Measurement of gloss for wrinkly textures of an automobile interior

Mitsutoshi Maeda, Tetsu Kachi, Hiroshi Ito, Morihiro Matsuda

Journal:

Optics & Laser Technology

Year:

1997

Language:

english

File:

PDF, 138 KB

english, 1997

24

Ultrastructure of internal limiting membrane removed during plasmin-assisted vitrectomy from eyes with diabetic macular edema

Tetsu Asami, Hiroko Terasaki, Shu Kachi, Makoto Nakamura, Keiko Yamamura, Toshitaka Nabeshima, Yozo Miyake

Journal:

Year:

2004

Language:

english

File:

PDF, 468 KB

english, 2004

25

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

Matsumoto, Satoru, Toguchi, Masachika, Takeda, Kentaro, Narita, Tetsuo, Kachi, Tetsu, Sato, Taketomo

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.81 MB

english, 2018

26

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Advanced SiC and GaN power electronics for automotive systems

Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu

Year:

2010

Language:

english

File:

PDF, 233 KB

english, 2010

27

A quantum structure for high-temperature operation of AlGaAs lasers: Multiple-quantum barrier and multiple-quantum well in active region

Kumar, Rajesh, Onda, Shouichi, Hara, Kunihiko, Kuno, Hironari, Matsui, Takeshi, Kachi, Tetsu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

28

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - GaN power devices for automotive applications

Uesugi, T., Kachi, Tetsu, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi

Year:

2013

Language:

english

File:

PDF, 513 KB

english, 2013

29

Reliability Evaluation of Al 2 O 3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

Kikuta, Daigo, Narita, Tetsuo, Kutsuki, Katsuhiro, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 324 KB

english, 2013

30

Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

Motohiro, Tomoyoshi, Kachi, Tetsu, Miura, Fusayoshi, Takeda, Yasuhiko, Hyodo, Shi-aki, Noda, Shoji

Journal:

Japanese Journal of Applied Physics

Year:

1992

File:

PDF, 473 KB

1992

31

[IEEE 2019 19th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2019.6.6-2019.6.7)] 2019 19th International Workshop on Junction Technology (IWJT) - Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing

Sakurai, Hideki, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Suzuki, Hideo, Narita, Tetsuo, Kataoka, Keita, Horita, Masahiro, kowski, Michal Bo, Suda, Jun, Kachi, Tetsu

Year:

2019

Language:

english

File:

PDF, 112 KB

english, 2019

32

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Yamada, Shinji, Omori, Masato, Sakurai, Hideki, Osada, Yamato, Kamimura, Ryuichiro, Hashizume, Tamotsu, Suda, Jun, Kachi, Tetsu

Journal:

Applied Physics Express

Year:

2020

File:

PDF, 444 KB

2020

33

Growth of 3C-SiC Layers on Silicon Substrates with a Novel Stress Relaxation Structure

Irokawa, Yoshihiro, Yamada, Noboru, Kodama, Masahito, Kachi, Tetsu

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 857 KB

english, 2001

34

Assignments of optically pumped CH3OD laser lines

Tetsu Kachi, Masanori Fukutani, Shozo Kon

Journal:

Journal of Infrared, Millimeter and Terahertz Waves

Year:

1982

Language:

english

File:

PDF, 275 KB

english, 1982

35

Reduction of peak electric field strength in GaN-HEMT with carbon doping layer

Tetsuo Narita, Daigo Kikuta, Hiroko Iguchi, Kenji Ito, Kazuyoshi Tomita, Tsutomu Uesugi, Tetsu Kachi

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 424 KB

english, 2012

36

[IEEE 2007 Power Conversion Conference - Nagoya - Nagoya, Japan (2007.04.2-2007.04.5)] 2007 Power Conversion Conference - Nagoya - Vertical device operation of AlGaN/GaN HEMTs on free-standing n-GaN substrates

Sugimoto, Masahiro, Ueda, Hiroyuki, Kanechika, Masakazu, Soejima, Narumasa, Uesugi, Tsutomu, Kachi, Tetsu

Year:

2007

Language:

english

File:

PDF, 1.85 MB

english, 2007

37

P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

Narita, Tetsuo, Kachi, Tetsu, Kataoka, Keita, Uesugi, Tsutomu

Journal:

Applied Physics Express

Year:

2017

Language:

english

File:

PDF, 1.17 MB

english, 2017

38

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Sakurai, Hideki, Narita, Tetsuo, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Malgorzata, Iwinska, Kataoka, Keita, Horita, Masahiro, Nobuyuki, Ikarashi, Bockowski, Michal, SUDA, Jun, KACHI, Tetsu

Journal:

Applied Physics Express

Year:

2020

File:

PDF, 532 KB

2020

39

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Kanechika, Masakazu, Sugimoto, Masahiro, Soejima, Narumasa, Ueda, Hiroyuki, Ishiguro, Osamu, Kodama, Masahito, Hayashi, Eiko, Itoh, Kenji, Uesugi, Tsutomu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 136 KB

english, 2007

40

Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

Horibuchi, Kayo, Yamaguchi, Satoshi, Kimoto, Yasuji, Nishikawa, Koichi, Kachi, Tetsu

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.45 MB

english, 2016

41

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Maeda, Takuya, Narita, Tetsuo, Ueda, Hiroyuki, Kanechika, Masakazu, Uesugi, Tsutomu, Kachi, Tetsu, Kimoto, Tsunenobu, Horita, Masahiro, Suda, Jun

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.85 MB

english, 2019

42

Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

Watanabe, Hideki, Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Kanechika, Masakazu, Ishiguro, Osamu, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 189 KB

english, 2007

43

Recent progress of GaN power devices for automotive applications

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.62 MB

english, 2014

44

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Tokuda, Yutaka, Matsuoka, Youichi, Ueda, Hiroyuki, Ishiguro, Osamu, Soejima, Narumasa, Kachi, Tetsu

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 313 KB

english, 2009

45

ACUTE RETINAL NECROSIS AFTER CORTICOSTEROID PULSE THERAPY FOR UNILATERAL VOGT-KOYANAGI-HARADA DISEASE

Yokoi, Reiko, Asami, Tetsu, Kachi, Shu, Ito, Yasuki, Nakamura, Makoto, Terasaki, Hiroko

Journal:

Retinal Cases & Brief Reports

Year:

2010

Language:

english

File:

PDF, 1.72 MB

english, 2010

46

Role of Caveolin-1 for Blocking the Epithelial-Mesenchymal Transition in Proliferative Vitreoretinopathy

Nagasaka, Yosuke, Kaneko, Hiroki, Ye, Fuxiang, Kachi, Shu, Asami, Tetsu, Kato, Seiichi, Takayama, Kei, Hwang, Shiang-Jyi, Kataoka, Keiko, Shimizu, Hideyuki, Iwase, Takeshi, Funahashi, Yasuhito, Higuch

Journal:

Investigative Opthalmology & Visual Science

Year:

2017

Language:

english

File:

PDF, 1.03 MB

english, 2017

47

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

Kogiso, Tatsuya, Narita, Tetsuo, Yoshida, Hikaru, Tokuda, Yutaka, Tomita, Kazuyoshi, Kachi, Tetsu

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 736 KB

2019

48

Study on post-etching processes for p-type GaN using HAX-PES

Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Kazuyoshi Tomita, Tsutomu Uesugi, Tetsu Kachi

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 299 KB

english, 2012

49

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

Kikuta, Daigo, Ito, Kenji, Narita, Tetsuo, KACHI, Tetsu

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 209 KB

english, 2019

50

Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy

Yutaka Tokuda, Youichi Matuoka, Kazuhiro Yoshida, Hiroyuki Ueda, Osamu Ishiguro, Narimasa Soejima, Tetsu Kachi

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 374 KB

english, 2007

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